Ion implantation (a form of doping) is integral to integrated circuit manufacturing. As the complexity of chips has grown, so has the number of implant steps. Today, a CMOS integrated circuit with embedded memory may require up to 60 implants.
The VIISta 3000XP, built on the acclaimed Varian dual-magnet single-wafer architecture, delivers the angle precision required for...
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The Varian VIISta 900 3D system succeeds the Varian VIISta 900 XPT as the industry’s flagship medium-current ion implanter for high-...
The VIISta 900XP delivers precision, cleanliness, productivity, and production worthiness in the medium current ion implantation market...
The VIISta HCP implanter leverages Varian's pioneering single-wafer high current technology to deliver high yields and the industry's...
The Varian VIISta PLAD™ plasma-based doping technology enables high-dose doping, material modification, and sidewall doping solutions at...
As the complexity of chips has grown, so has the number of ion implantation steps. Today, a CMOS integrated circuit with embedded memory...
