ALD is a crucial enabler of today’s most advanced planar devices as well as the industry’s transition to 3D architectures. Applied’s ALD systems deposit a variety of oxides, metal nitrides, and metals on the wafer one fraction of a monolayer at a time to create ultra-thin layers in advanced transistor, memory, and interconnect applications.
The ALD process builds up material directly on the surface of the chip, a fraction of a monolayer at a time, to produce the thinnest, most uniform films possible. The self-limiting nature of the process and the related capacity for conformal deposition are the basis for its importance as a scaling and 3D enabler. The self-limiting surface reaction makes atomic-scale deposition control possible: film thickness depends only on the number of reaction cycles performed. Surface control makes the films extremely conformal and uniform in thickness, both essential properties in emerging 3D device designs.
Tungsten, with its low resistivity and minimal electro-migration, has long been used in logic and memory devices as the material of...
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