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ALD is a crucial enabler of today’s most advanced planar devices as well as the industry’s transition to 3D architectures. Applied’s ALD systems deposit a variety of oxides, metal nitrides, and metals on the wafer one fraction of a monolayer at a time to create ultra-thin layers in advanced transistor, memory, and interconnect applications.


The ALD process builds up material directly on the surface of the chip, a fraction of a monolayer at a time, to produce the thinnest, most uniform films possible. The self-limiting nature of the process and the related capacity for conformal deposition are the basis for its importance as a scaling and 3D enabler. The self-limiting surface reaction makes atomic-scale deposition control possible: film thickness depends only on the number of reaction cycles performed. Surface control makes the films extremely conformal and uniform in thickness, both essential properties in emerging 3D device designs.