Continued process scaling is driving new levels of device performance. ALD technology is essential for a growing number of steps in DRAM, 3D NAND and logic FinFET fabrication. However, while the conformality and uniform film thickness achieved with ALD is still vital for CD control, additional demands are being made on ALD to deliver a growing range of high-quality, robust films within restrictive thermal budgets.
The Applied Olympia® ALD system for stand-alone deposition of dielectric films addresses the significant challenge of obtaining high-quality ALD films at the low deposition temperatures needed to fabricate planar and 3D devices by offering unique sequencing capabilities. The flexible design also enables the system to accommodate the wide variety of precursors needed to deliver the quality, diversity and thermal range of ALD processes.
In the Olympia chamber, wafers rotate through isolated zones of different chemistries. Here, each wafer is exposed to two chemistries in series; they react at the wafer surface to create a conformal monolayer of film. An additional monolayer is deposited with every exposure cycle. Treatment processes can be incorporated into the sequence to meet specific customer needs.