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Epitaxy is used in semiconductor fabrication either to create a perfect crystalline foundation layer on which to build a semiconductor device or to alter mechanical attributes of an underlayer in a way that improves its electrical conductivity.

The latter applications are collectively known as strain engineering; they involve creating either compressive or tensile strain in the lattice of the channel material beneath the transistor gate. Applied’s market-leading, proprietary epi technologies produce highly uniform strained films with precise placement of dopant atoms and exceptionally low defect levels.