The leading metal oxide film candidate that offers up to ten-times higher electron mobility than amorphous silicon (a-Si) is indium gallium zinc oxide (IGZO).
The higher mobility of IGZO enables refresh rates up to 480Hz for high definition and 3D TV screens and supports smaller transistors that translate into smaller pixels for higher screen resolution and longer battery life. Manufacturing MOx transistors requires more than just plasma enhanced chemical vapor deposition (PECVD) technology used for a-Si transistors. The IGZO film is deposited using a physical vapor deposition (PVD) process -- and protected from hydrogen contamination that could degrade the metal by a SiO2 dielectric film layer deposited using a PECVD process.
